Method for fabricating tungsten line and method for fabricating gate of semiconductor device using the same
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United States of America Patent
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May 14, 2013
Grant Date -
Jan 29, 2009
app pub date -
Jun 27, 2008
filing date -
Jul 2, 2007
priority date (Note) -
Expired
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Abstract
A method for fabricating a tungsten (W) line includes forming a silicon-containing layer, forming a diffusion barrier layer over the silicon-containing layer, forming a tungsten layer over the diffusion barrier layer, and performing a thermal treatment process on the tungsten layer to increase a grain size of the tungsten layer.
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