Method and apparatus for growing plasma atomic layer
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United States of America Patent
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May 14, 2013
Grant Date -
Nov 26, 2009
app pub date -
Mar 28, 2007
filing date -
Mar 30, 2006
priority date (Note) -
Expired
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Abstract
Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
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