Methods for forming a ruthenium-based film on a substrate
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United States of America Patent
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May 7, 2013
Grant Date -
Jul 14, 2011
app pub date -
Jan 20, 2011
filing date -
Feb 21, 2007
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Abstract
Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.
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