Epitaxial reactor for mass production of wafers
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United States of America Patent
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May 7, 2013
Grant Date -
Sep 3, 2009
app pub date -
Jun 15, 2006
filing date -
Jun 16, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A high throughput reactor for the mass production of wafers through chemical vapor deposition, mainly to form silicon epitaxies for the photovoltaic industry, is described. Main innovation is a high susceptor stacking density: several graphite susceptors are placed vertically and parallel to one another, electrically interconnected, and are heated by Joule effect. Electrical current gets to the susceptors from the current source through specially designed feedthroughs, which connect the cold room outside the deposition chamber with the hot susceptors. Gas flows vertically between susceptors. The substrates on which deposition occurs are placed on the susceptors. Below the susceptors a pre-chamber is found, in which entering gas calms down and distributes homogeneously. Susceptors and pre-chamber are placed inside a stainless steel chamber, which is internally covered by a reflecting material, and externally kept cold by water. Both susceptors and pre-chamber are fixed to a connection panel, which also contains electrical feedthroughs, thermocouple feedthroughs, and gas inlet and outlet. Outlet gases are partially recycled, with the corresponding gas savings and increased deposition efficiency.
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