Sub-threshold forced plate FET sensor for sensing inertial displacements, a method and system thereof
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United States of America Patent
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May 7, 2013
Grant Date -
Mar 3, 2011
app pub date -
Jun 19, 2008
filing date -
Apr 11, 2008
priority date (Note) -
Expired
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Abstract
The present invention relates to a Sub-threshold Field Effect Transistor (SF-FET). The invention integrates a MEMS mechanical transducer along with the sensing mechanism in a single device. Forced mass is capacitively coupled onto the FET structure. Dielectric SiO2 forms good interface with underlying silicon substrate. Air dielectric forms second dielectric wherein effective gate capacitance is the series combination of the second dielectric capacitance and fixed dielectric. Inertial displacements are sensed by observing change in drain current (ID) of the sensor due to change in gap height (TGap) of the second dielectric of the sensor caused by forced mass.
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