Electric field information reading head, electric field information writing/reading head and fabrication methods thereof and information storage device using the same
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United States of America Patent
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Apr 30, 2013
Grant Date -
Sep 16, 2010
app pub date -
May 10, 2007
filing date -
May 10, 2006
priority date (Note) -
Expired
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Abstract
Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.
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