Back-side illumination image sensor
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United States of America Patent
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Apr 30, 2013
Grant Date -
Aug 2, 2012
app pub date -
Jan 31, 2011
filing date -
Jan 31, 2011
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the transfer transistor.
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