Tape-shaped oxide superconductor
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United States of America Patent
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Apr 30, 2013
Grant Date -
Aug 5, 2010
app pub date -
May 7, 2008
filing date -
Jun 12, 2007
priority date (Note) -
Expired
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Abstract
A tape-shaped oxide superconductor includes a 15 to 100 nm-thick Ce—Gd—O-based oxide layer (Ce:Gd=40:60 to 70:30 molar ratio) and a 100 nm-thick Ce—Zr—O-based oxide layer (Ce:Zr=50:50 molar ratio) as first and second intermediate layers are formed by MOD on an Ni-base alloy substrate having a half value width (FWHM:Δφ) of 6.5 degrees. A 150 nm-thick CeO2 oxide layer as a third intermediate layer is formed on the second intermediate layer by RF sputtering. A 1 μm-thick YBCO superconducting layer is formed by TFA-MOD on the three-layer structure. In the tape-shaped oxide superconductor, the Δφ values of the first to third intermediate layers are (6.0 to 6.5) degrees, (6.0 to 6.6) degrees, and (6.0 to 6.6) degrees, respectively, and the Jc value of the YBCO superconducting layer in liquid nitrogen is 1.8 to 2.2 MA/cm2.
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