Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 30, 2013
Grant Date -
Sep 2, 2010
app pub date -
Aug 31, 2007
filing date -
Aug 31, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
One embodiment of the present invention provides a method for fabricating a group III-V nitride structure with an ohmic-contact layer. The method involves fabricating a group III-V nitride structure with a p-type layer. The method further involves depositing an ohmic-contact layer on the p-type layer without first annealing the p-type layer. The method also involves subsequently annealing the p-type layer and the ohmic-contact layer in an annealing chamber at a predetermined temperature for a predetermined period of time, thereby reducing the resistivity of the p-type layer and the ohmic contact in a single annealing process.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully