Manufacturing method of ultrasonic probe and ultrasonic probe
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United States of America Patent
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Apr 30, 2013
Grant Date -
Nov 10, 2011
app pub date -
Jan 6, 2010
filing date -
Jan 16, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented.
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