Vertical Hall sensor and method of producing a vertical Hall sensor
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United States of America Patent
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Apr 23, 2013
Grant Date -
Oct 7, 2010
app pub date -
Mar 24, 2010
filing date -
Mar 24, 2009
priority date (Note) -
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Abstract
Through a main surface (10) of a semiconductor substrate (1) of a first type of conductivity, a doped well of a second type of conductivity is implanted to form a sensor region (3) extending perpendicularly to the main surface. The sensor region can be confined laterally by trenches (5) comprising an electrically insulating trench filling (6). The bottom of the sensor region is insulated by a pn-junction (20). Contacts (4) are applied to the main surface and provided for the application of an operation voltage and the measurement of a Hall voltage.
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