Solid-state imaging device
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United States of America Patent
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Apr 23, 2013
Grant Date -
Feb 2, 2012
app pub date -
Jul 14, 2011
filing date -
Jul 30, 2010
priority date (Note) -
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Abstract
A pixel includes at least first to fourth semiconductor tiers. The first semiconductor tier includes a first semiconductor region that is electrically connected to a first external circuit, a second semiconductor region, and a third semiconductor region that is isolated from the first semiconductor region by the second semiconductor region and that is electrically connected to a second external circuit. The second semiconductor tier includes a MOS transistor that has insulating films and gate conductive electrodes that are electrically connected to a third external circuit. The third semiconductor tier includes a photodiode formed of the second and fourth semiconductor regions. A junction transistor is formed in which the fourth semiconductor region serves as a gate and in which one of the first and fifth semiconductor regions serves as a drain and the other serves as a source.
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