Liquid crystal display device having a third electrode formed over a second insulating film and overlapped with a pair of gate lines
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United States of America Patent
Stats
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Apr 16, 2013
Grant Date -
Jun 7, 2012
app pub date -
Dec 1, 2011
filing date -
Jul 25, 1995
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A display device including a thin film transistor having a semiconductor layer comprising an i-type semiconductor and an impurity doped semiconductor laminated over a first insulating film, a first electrode formed over the semiconductor layer, and a second electrode formed by a part of a data line. A second insulating film is formed over the data line and the transistor and a third electrode is formed over the second insulating film and overlapped with a gate line. In a cross section of an end portion of the first electrode in a direction of a length of a channel, the impurity doped semiconductor extends a minimum distance of 0.2 μm beyond the first electrode in the direction of a length of a channel of the transistor and the i-type semiconductor extends beyond the impurity doped semiconductor in the direction of a length of a channel.
First Claim
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