Methods of fabricating semiconductor devices and semiconductor devices fabricated by the same
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United States of America Patent
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Apr 16, 2013
Grant Date -
Jul 7, 2011
app pub date -
Dec 6, 2010
filing date -
Dec 7, 2009
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Abstract
Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.
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