Plasma processing apparatus

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United States of America Patent

PATENT NO 8414702
APP PUB NO 20110180000A1
SERIAL NO

13082340

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Abstract

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A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED MICRO-FABRICATION EQUIPMENT INC CHINA201201 SHANGHAI CITY JINGQIAO EXPORT PROCESSING ZONE OF PUDONG NEW AREA (SOUTH) TAIHUA ROAD NO 188 MUNICIPAL DISTRICT SHANGHAI CITY 201201

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Qian, Qing San Jose, US 11 48

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