Silicon device structure, and sputtering target used for forming the same
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United States of America Patent
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Feb 5, 2013
Grant Date -
Jan 12, 2012
app pub date -
Jul 6, 2011
filing date -
Jul 7, 2010
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Abstract
There is provided a silicon device structure, comprising: a P-doped n+ type amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n+ type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.
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