Apparatus and method for manufacturing multi-component oxide heterostructures
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United States of America Patent
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Apr 2, 2013
Grant Date -
Mar 17, 2011
app pub date -
Jun 10, 2010
filing date -
Jun 10, 2009
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Abstract
Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlO3 as a gate tunneling dielectric. Other types of memory devices (DIMMS, DRAM, and DDR) made with patterned ALD of LaAlO3 as a gate dielectric are also possible.
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