Manufacturing method of copper interconnection structure with MIM capacitor
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United States of America Patent
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Apr 2, 2013
Grant Date -
Dec 1, 2011
app pub date -
Jul 14, 2010
filing date -
Feb 25, 2010
priority date (Note) -
Expired
status (Latency Note)
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Abstract
present invention discloses a manufacturing method for a copper interconnection structure with MIM capacitor. The method firstly makes a copper conductive pattern in a copper interconnection structure and a copper through hole bolt connected with the copper conductive pattern; etch away an insulation layer around the copper through hole bolt and deposit a etch stop layer, so as to expose the top and side surface of the copper through hole bolt and part of the top surface of the copper conductive pattern; deposit a dielectric layer on the obtained structure and fill a protection material in the recession area of the obtained structure; etch a trench for receiving other copper conductive patterns; remove the protection material; plate copper in the recession area, and plate copper in the trench, so as to obtain a copper interconnection structure with MIM capacitor.
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