Semiconductor structure

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United States of America Patent

PATENT NO 8405183
APP PUB NO 20100258172A1
SERIAL NO

12760086

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An electronic structure includes a first area having silicon grains having a size smaller than 100 micrometers and a second area superposed to the first area and having silicon grains having a size greater than or equal to 100 micrometers. The first and second areas form a support. At least one layer of an epitaxial semiconductor material is disposed on the second area.

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Patent Owner(s)

Patent OwnerAddress
STILEPOLE DES ECO-INDUSTIRES 3 RUE RAOUL FOLLEREAU POITIERS 86194

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Straboni, Alain Buxerolles, FR 11 84

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