Plasma oxidation method and plasma oxidation apparatus

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United States of America Patent

PATENT NO 8404602
APP PUB NO 20110250763A1
SERIAL NO

13085215

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Abstract

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A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin

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Patent Owner(s)

Patent OwnerAddress
FUJIFILM CORPORATION26-30 NISHIAZABU 2-CHOME MINATO-KU TOKYO 106-8620
TOKAI UNIVERSITY EDUCATIONAL SYSTEMTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shindo, Haruo Hiratsuka, JP 4 28
Takahashi, Shuji Kanagawa-ken, JP 99 789

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