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Abstract

The invention concerns the use of the ruthenium containing precursor having the formula

description='In-line Formulae' end='lead'(R_n-chd)Ru(CO)₃,description='In-line Formulae' end='tail'

wherein:

(Rn-chd) represents a cyclohexadiene (chd) ligand substituted with n substituents R, any R being in any position on the chd ligand;n is an integer comprised between 1 and 8 (1≦n≦8) and represents the number of substituents on the chd ligand;R is selected from the group consisting of C1-C4 linear or branched alkyls, alkylamides, alkoxides, alkylsilylamides, amidinates, carbonyl and/or fluoroalkyl for R being located in any of the eight available position on the chd ligand, while R can also be oxygen O for substitution on the C positions in the chd cycle which are not involved in a double bondfor the deposition of a Ru containing film on a substrate.

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First Claim