Vertical nonvolatile memory device including a selective diode

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United States of America Patent

PATENT NO 8399874
APP PUB NO 20120181498A1
SERIAL NO

13008007

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Abstract

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Provided are a vertical nonvolatile memory device and a method for fabricating the vertical nonvolatile memory device. The vertical nonvolatile memory device can be integrated more highly as compared with a nonvolatile memory device of the related art. In addition, since the vertical nonvolatile memory device includes a selective diode, reading errors can be prevented.

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Patent Owner(s)

Patent OwnerAddress
SNU R&B FOUNDATIONSAN 56-1 SILLIM-DONG GWANAK-GU SEOUL 151-010

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hwang, Cheol Seong Seoul, KR 31 237

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