Process for high-pressure nitrogen annealing of metal nitrides
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United States of America Patent
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Mar 19, 2013
Grant Date -
Jan 3, 2013
app pub date -
Jun 28, 2011
filing date -
Jun 28, 2011
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Abstract
The disclosure provides a process to anneal group III-V metal nitride crystals, wafers, epitaxial layers, and epitaxial films to reduce nitrogen vacancies. In particular, the disclosure provides a process to perform slow annealing of the group III-V metal nitrides in a high temperature and high pressure environment.
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