Systems and methods for fabricating self-aligned memory cell
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 12, 2013
Issued Date -
N/A
app pub date -
Mar 25, 2006
filing date -
Mar 25, 2006
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-XCaXMnO3 (PCMO) layer above the insulator and the metal portions, wherein X is between approximately 0.3 and approximately 0.5, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully