Multilayered semiconductor wafer and process for manufacturing the same
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United States of America Patent
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Mar 12, 2013
Grant Date -
Dec 29, 2011
app pub date -
Sep 6, 2011
filing date -
Aug 30, 2006
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Abstract
Silicon carbide substrate wafers are prepared by transferring a monocrystalline silicon layer from a donor wafer onto a handle wafer, the silicon layer being implanted with carbon and annealed to form a monocrystalline SiC layer prior to or after transfer of the silicon layer.
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