Matrix-type cold-cathode electron source device

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United States of America Patent

PATENT NO 8384281
APP PUB NO 20110057555A1
SERIAL NO

12991005

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Abstract

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A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).

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Patent Owner(s)

Patent OwnerAddress
PHC HOLDINGS CO LTD6F TOKYO GINKO KYOKAI BUILDING 1-3-1 MARUNOUCHI CHIYODA-KU TOKYO 100-0005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koga, Keisuke Ehime, JP 32 275
Yamamoto, Makoto Hyogo, JP 297 3169

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