Memory including vertical bipolar select device and resistive memory element
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United States of America Patent
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Feb 26, 2013
Grant Date -
Dec 23, 2010
app pub date -
Aug 10, 2010
filing date -
Feb 1, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A memory includes a first vertical bipolar select device including a first base and a first emitter, a first phase change element coupled to the first emitter, a second vertical bipolar select device including a second base and a second emitter, a second phase change element coupled to the second emitter, and a buried word line contacting the first base and the second base.
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