Method for forming buffer layer for GaN single crystal
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United States of America Patent
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Feb 26, 2013
Grant Date -
Nov 5, 2009
app pub date -
May 1, 2009
filing date -
May 2, 2008
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Abstract
Disclosed is a method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of a doped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 μm on the sapphire substrate by reacting HCl and NH3 as a Group III/V mix gas.
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