Selective imaging through dual photoresist layers

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8383323
APP PUB NO 20080076068A1
SERIAL NO

11520425

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Abstract

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A system and method for selective imaging through dual photoresist layers. The system and method includes coating a surface of the wafer with a first resist and baking the wafer to sufficiently drive out solvents in the first resist. The first resist is exposed to a first radiation source and exposing an edge of the wafer having the first resist disposed thereon to the first radiation source. The method further includes hard baking the first resist to the wafer and coating the first resist with a second resist. The method also includes baking the wafer to sufficiently drive out solvents in the second resist and exposing the second resist to a second radiation source. The method also includes exposing select portions of the edge of the wafer having the second resist disposed thereon to the second radiation source and hard baking the second resist to the wafer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO
SAMSUNG AUSTIN SEMICONDUCTOR L P12100 SAMSUNG BLVD AUSTIN TX 78754

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, David Austin, US 19 262
Mendoza, Karla Austin, US 1 0
Morrison, Pedro Austin, US 2 7
Soukup, Kevin Austin, US 1 0

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