Method of forming a film by deposition from a plasma
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United States of America Patent
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Feb 26, 2013
Grant Date -
Feb 25, 2010
app pub date -
Oct 26, 2007
filing date -
Nov 2, 2006
priority date (Note) -
Expired
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Abstract
A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.
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