Process of forming nanocrystal layer

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United States of America Patent

PATENT NO 8382919
APP PUB NO 20100151270A1
SERIAL NO

12590576

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Abstract

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A process of forming an ultrafine crystal layer in a workpiece constituted by a metallic material. The process includes: performing a machining operation on a surface of the workpiece, so as to impart a large local strain to the machined surface of the workpiece, where the machining operation causes the machined surface of the workpiece to be subjected to a plastic working that causes to have large local strain in the form of a true strain of at least one, such that the ultrafine crystal layer is formed in a surface layer portion of the workpiece that defines the machined surface of the workpiece. Also disclosed are a nanocrystal layer forming process, a machine component having the ultrafine crystal layer or the nanocrystal layer, and a machine component producing process of producing the machine component.

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Patent Owner(s)

Patent OwnerAddress
TOYOHASHI UNIVERSITY OF TECHNOLOGY1-1 HIBARIGAOKA TEMPAKU-CHO TOYOHASHI-SHI AICHI 441-8580

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ota, Toshiichi Kosai, JP 2 2
Suzuki, Tadashi Kosai, JP 237 4214
Tanaka, Shuji Kosai, JP 148 947
Todaka, Yoshikazu Toyohashi, JP 4 3
Umemoto, Minoru Toyohashi, JP 4 3
Yamashita, Akihiro Kosai, JP 70 725

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