Semiconductor substrate with interlayer connection and method for production of a semiconductor substrate with interlayer connection
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United States of America Patent
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Feb 19, 2013
Grant Date -
Dec 16, 2010
app pub date -
Jul 23, 2008
filing date -
Jul 24, 2007
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Abstract
The interlayer connection of the substrate is formed by a contact-hole filling (4) of a semiconductor layer (11) and metallization (17) of a recess (16) in a reverse-side semiconductor layer (13), wherein the semiconductor layers are separated from each other by a buried insulation layer (12), at whose layer position the contact-hole filling or the metallization ends.
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