Electrostatic discharge protection devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 12, 2013
Grant Date -
Sep 9, 2010
app pub date -
Mar 5, 2010
filing date -
Mar 6, 2009
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An electrostatic discharge (ESD) protection circuit having first and second transistors and an ESD clamp circuit. The first and second transistors are coupled in series between first and second voltage input pins of a chip. The ESD clamp circuit is coupled between the first and second voltage input pins. The drains of the first and second transistors are coupled to an I/O pin of the chip. The doping regions of the first and second transistors are of distinct doping concentrations. The first transistor comprises four doping regions, and has a source formed by the first and third doping regions, and has a drain formed by the second and the fourth doping regions. The first doping region is within the third doping region. The second doping region is within the fourth doping region. The doping concentration of the fourth doping region is less than that of the third doping concentration.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully