Systems and methods for fabricating self-aligned memory cell
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United States of America Patent
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Feb 5, 2013
Grant Date -
May 17, 2012
app pub date -
Apr 22, 2011
filing date -
Jul 14, 2006
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Abstract
Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-XCaXMnO3 (PCMO) layer above the insulator and the metal portions, wherein X is between approximately 0.3 and approximately 0.5, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.
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