Process for producing silicon carbide semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Feb 5, 2013
Grant Date -
Dec 24, 2009
app pub date -
Sep 1, 2006
filing date -
Sep 14, 2005
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.
First Claim
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