Polydiode structure for photo diode
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United States of America Patent
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Feb 5, 2013
Grant Date -
Dec 1, 2011
app pub date -
Aug 8, 2011
filing date -
Nov 7, 2003
priority date (Note) -
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Abstract
An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.
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