Metal chalcogenide aqueous precursors and processes to form metal chalcogenide films

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United States of America Patent

PATENT NO 8366967
APP PUB NO 20110206599A1
SERIAL NO

12709834

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Abstract

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Metal chalcogenide precursor solutions are described that comprise an aqueous solvent, dissolved metal formate salts and a chalcogenide source composition. The chalcogenide source compositions can be organic compounds lacking a carbon-carbon bond. The precursors are designed to form a desired metal chalcogenide upon thermal processing into films with very low levels of contamination. Potentially contaminating elements in the precursors form gaseous or vapor by-products that escape from the vicinity of the product metal chalcogenide films.

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Patent Owner(s)

Patent OwnerAddress
INPRIA CORPORATION1100 NE CIRCLE BOULEVARD SUITE 360 CORVALLIS OR 97330

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Clark, Bejamin L Corvallis, US 1 64
Keszler, Douglas A Corvallis, US 75 3370

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