Multi-station decoupled reactive ion etch chamber
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United States of America Patent
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Feb 5, 2013
Grant Date -
Jan 17, 2008
app pub date -
Jul 2, 2007
filing date -
Aug 5, 2005
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Abstract
A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.
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