Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation
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United States of America Patent
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Jan 29, 2013
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app pub date -
Jun 1, 2009
filing date -
Sep 26, 2002
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Abstract
Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10−8 A/cm2.
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