Semiconductor light-emitting device with metal support substrate

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United States of America Patent

PATENT NO 8361880
APP PUB NO 20080224154A1
SERIAL NO

12063989

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Abstract

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One embodiment of the present invention provides a semiconductor light-emitting device which includes a multi-layer structure. The multilayer structure comprises a first doped layer, an active layer, and a second doped layer. The semiconductor light-emitting device further includes a first Ohmic-contact layer configured to form a conductive path to the first doped layer, a second Ohmic-contact layer configured to form a conductive path to the second doped layer, and a support substrate comprising not less than 15% chromium (Cr) measured in weight percentage.

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Patent Owner(s)

Patent OwnerAddress
LATTICE POWER (JIANGXI) CORPORATIONNANCHANG JIANGXI 330047

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fang, Wenqing Jiang Xi, CN 17 290
Jiang, Fengyi Nanchang, CN 31 1094
Wang, Li Jiang Xi, CN 972 13354
Xiong, Chuanbing Jiang Xi, CN 9 382

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