Strain balanced laser diode
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United States of America Patent
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Jan 22, 2013
Grant Date -
Aug 23, 2012
app pub date -
Feb 17, 2011
filing date -
Feb 17, 2011
priority date (Note) -
Expired
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Abstract
According to the concepts of the present disclosure, laser diode waveguide configurations are contemplated where the use of Al in the waveguide layers of the laser is presented in the form of InGaN/Al(In)GaN waveguiding superstructure comprising optical confining wells (InGaN) and strain compensating barriers (Al(In)GaN). The composition of the optical confining wells is chosen such that they provide strong optical confinement, even in the presence of the Al(In)GaN strain compensating barriers, but do not absorb lasing emission. The composition of the strain compensating barriers is chosen such that the Al(In)GaN exhibits tensile strain that compensates for the compressive strain of InGaN optical confinement wells but does not hinder the optical confinement.
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