Electronic device comprising a field effect transistor for high-frequency applications
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United States of America Patent
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Jan 22, 2013
Grant Date -
Oct 19, 2006
app pub date -
Apr 28, 2004
filing date -
May 2, 2003
priority date (Note) -
Expired
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Abstract
An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in the back-off region under class AB signal operation.
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