Frequency doubling using a photo-resist template mask
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United States of America Patent
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Jan 22, 2013
Grant Date -
Apr 30, 2009
app pub date -
Oct 24, 2008
filing date -
Oct 26, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.
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