Semiconductor light-emitting devices for generating arbitrary color
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United States of America Patent
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Jan 15, 2013
Grant Date -
Feb 16, 2012
app pub date -
Aug 19, 2008
filing date -
Aug 19, 2008
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Abstract
A light-emitting device includes a conductive substrate (320), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (308), a p-type doped semiconductor layer (312) situated above the n-type doped semiconductor layer (308), and a MQW active layer (310) situated between the p-type and n-type doped semiconductor layer (308,312). The multilayer semiconductor structure is divided by grooves (300) to form a plurality of independent light-emitting mesas (304,306). At least one light-emitting mesa (304,306) comprises a color conversion layer (324,326).
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