Semiconducting nanoparticles with surface modification

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United States of America Patent

PATENT NO 8354662
APP PUB NO 20100148144A1
SERIAL NO

11922790

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Abstract

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The invention relates to semiconducting nanoparticles. The nanoparticles of the invention comprise a single element or a compound of elements in one or more of groups II, III, IV, V, VI. The nanoparticles have a size in the range of 1 nm to 500 nm, and comprise from 0.1 to 20 atomic percent of oxygen or hydrogen. The nanoparticles are typically formed by comminution of bulk high purity silicon. One application of the nanoparticles is in the preparation of inks which can be used to define active layers or structures of semiconductor devices by simple printing methods.

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Patent Owner(s)

Patent OwnerAddress
PST SENSORS (PROPRIETARY) LIMITEDUPPER CAMPUS UNIVERSITY OF CAPE TOWN RW JAMES BUILDING ROOM 513 CAPE TOWN 7700

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Britton, David Thomas Cape Town, ZA 15 316
Härting, Margit Cape Town, ZA 2 6

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