Nanowire sized opto-electronic structure and method for manufacturing the same
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United States of America Patent
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Jan 8, 2013
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Oct 3, 2011
filing date -
Sep 26, 2011
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Abstract
An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure.
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