Gate voltage boosting element for charge pump

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United States of America Patent

PATENT NO 8339184
SERIAL NO

12915767

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Abstract

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Systems, methods, and devices that generate a desired boosted gate voltage to facilitate controlling a charge pump are presented. A multi-phase charge pump (e.g., two-phase CMOS charge pump) can comprise a desired number of switch cells (SCs), wherein each SC can include a gate boost switch control component, which employs two transistors (without the need for external circuitry), and generates a desired gate voltage, based at least in part on a desired clock signal, wherein the desired gate voltage is applied to a charge transfer switch, Mc, of the SC to facilitate transferring a voltage across the Mc to a node on the other side of the Mc, in each stage of the charge pump, wherein the SCs are associated with a desired number of flying capacitors to facilitate increasing the input voltage to a desired output voltage.

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Patent Owner(s)

Patent OwnerAddress
CABIER INSTITUTE SL42 ST JOAN DE LASALLE ED ST MIQUEL FEBRES - TECHNOVA BARCELONA BARCELONA 08025

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kok, Chi Wah Hong Kong, CN 12 271
Tam, Wing Shan Hong Kong, CN 5 136
Wong, Oi Ying Hong Kong, CN 3 121

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