Processes for curing silicon based low-k dielectric materials
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United States of America Patent
Stats
-
Dec 25, 2012
Grant Date -
Aug 27, 2009
app pub date -
Feb 26, 2008
filing date -
Feb 26, 2008
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Processes for curing silicon based low k dielectric materials generally includes exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species.
First Claim
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