Multi-station plasma reactor with multiple plasma regions

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United States of America Patent

PATENT NO 8336488
APP PUB NO 20090139453A1
SERIAL NO

11961718

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED MICRO-FABRICATION EQUIPMENT INC CHINA201201 SHANGHAI CITY JINGQIAO EXPORT PROCESSING ZONE OF PUDONG NEW AREA (SOUTH) TAIHUA ROAD NO 188 MUNICIPAL DISTRICT SHANGHAI CITY 201201

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Aihua Shanghai, CN 41 2236
Chen, Jinyuan Shanghai, CH 17 282
Ho, Henry Shanghai, CN 29 2887
Liu, Yijun Shanghai, CN 79 737
Luo, Lee Shanghai, CN 37 4263
Ni, Tuqiang Shanghai, CN 77 1517
Yin, Gerald Shanghai, CN 30 2373

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