Resist pattern swelling material, and method for patterning using same
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United States of America Patent
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Dec 18, 2012
Grant Date -
Nov 6, 2008
app pub date -
Jun 25, 2008
filing date -
Aug 10, 2001
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Abstract
To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.
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